Micron, a key player in memory technology, has just unveiled a groundbreaking advancement in memory chips. The company introduced the world to its blazingly fast HBM3 Gen2 memory, boasting a remarkable speed of 1.2 TB/s. In addition, Micron is set to revolutionize the memory landscape by mass producing 32GB DDR5 chips, with plans to roll out higher capacity modules in the first half of 2024.
This stride forward is a significant leap from Micron’s previous 24GB DDR5 chips. The 32GB DDR5 chips are built using Micron’s cutting-edge 1β (1-beta) process, a state-of-the-art manufacturing technique that doesn’t rely on extreme ultraviolet lithography. The introduction of these chips opens the door to the possibility of 1TB DDR5 modules, although Micron has chosen to take a measured approach. The company will initially offer 128GB modules next year, indicating a carefully considered strategy.
Micron’s HBM3 Gen2 memory is aptly named, thanks to its staggering total bandwidth of 1.2TB/s in an 8-level stack configuration. The memory has a maximum capacity of 24GB, with plans to introduce 36GB circuits soon. Notably, this new generation of memory delivers an impressive 2.5-fold increase in energy efficiency compared to its predecessor, HBM2E.
Looking ahead, Micron’s roadmap includes an even more advanced memory technology, referred to as HBMNex or possibly HBM4. This upcoming memory is projected to provide an unprecedented bandwidth of 2+ TB/s and a capacity of up to 64GB by the year 2026.
Micron’s recent announcements underscore the company’s commitment to pushing the boundaries of memory technology. As the tech landscape continues to evolve, Micron’s innovations are poised to reshape the capabilities of memory modules, offering faster speeds, larger capacities, and improved energy efficiency.